Analysis of x - ray diffraction as a probe of interdiffusion in Si / SiGe heterostructures

Analysis of x-ray diffraction as a probe of interdiffusion in Si/SiGe heterostructures D.B. Aubertine, N. Ozguven, and P.C. McIntyre Department of Materials Science and Engineering Stanford University, Stanford, CA S. Brennan Stanford Synchrotron Radiation Laboratory Stanford Linear Accelerator Center, Stanford, CA We investigate numerical simulations that utilize a non-linear interdiffusion solver and dynamical x-ray diffraction calculations to predict the local composition evolution in low Ge concentration Si/SiGe superlattices and their diffraction patterns during annealing. Superlattice satellite peak decay rates are compared with experimentally measured values and simulated diffraction patterns are matched directly to data with good success. The simulations are used to test the sensitivity of x-ray diffraction to various uncertainties commonly encountered when measuring interdiffusion at Si/SiGe interfaces. It is found that the most serious errors result from variations in the Ge content across the surface of the wafer. For example, the resolution limit of most experimental techniques used to measure Ge concentration in a SiGe film is – 1 at.%, for a film with 11% mean Ge concentration annealed for 5 hours at 870...C, this level of error will cause the observed interdiffusivity values to deviate by —25% or +50%. The simulations are further used to show that for Si/SiGe interdiffusion, superlattice diffraction produces valid measurements when applied to 004 superlattice satellite peaks and square wave composition modulations even though it is only exactly applicable to satellite peaks about 000 reflection and to sinusoidal composition modulations. Finally, we show that proper interpretation of x-ray scattering data to extract Si/SiGe interdiffusivity values must account for the strong dependence of the interdiffusivity on Ge concentration. SLAC-PUB-10137